Postdoctoral Researcher Jobs in North Carolina

Postdoctoral Research Positions in Colloidal Quantum Dots for Infrared Photodetectors

Our lab has made significant advances in III–V colloidal quantum dots (CQDs) and extended-SWIR PbS materials for high-performance infrared photodetectors and imaging systems. We invite applications for two postdoctoral positions focused on next-generation SWIR and room-temperature MWIR photodetectors based on III–V, Ag₂Te, and related CQDs.

The project aims to establish a materials-to-device platform using InAs-, InSb-, Ag₂Te-, and extended-SWIR PbS/PbSe-based CQDs, with emphasis on surface reconstruction, ligand engineering, precursor chemistry, energetic band alignment, low-trap-density CQD solids, and novel infrared photodetector architectures.

The first position focuses on CQD synthesis and surface chemistry, including solution-phase ligand exchange and thin-film engineering. The second position focuses on novel infrared photodetector architectures incorporating metasurfaces and optical-field manipulation for high-performance SWIR and exploratory room-temperature MWIR detection.

Candidates should hold a PhD in chemistry, materials science, electrical engineering, applied physics, or a related field, with expertise in colloidal nanocrystal synthesis or optoelectronic device physics. Experience in III–V CQDs, infrared photodetectors, surface spectroscopy, thin-film processing, or low-noise optoelectronic measurements is highly desirable.

We seek a postdoctoral researcher to develop novel SWIR and exploratory room-temperature MWIR photodetectors based on CQDs. The position focuses on device architecture design, charge-transport-layer engineering, dark-current suppression, metasurface integration, optical-field manipulation, and low-noise detector characterization. The successful candidate will translate optimized CQD solids into high-performance infrared photodetectors with enhanced light absorption, carrier extraction, and operational stability.

Key Objectives

• Design novel infrared photodetector architectures integrating CQD thin films with metasurfaces, optical cavities, plasmonic resonators, and other light-management structures.
• Develop high-performance SWIR CQD photodetectors using III–V CQDs and related materials.
• Explore room-temperature MWIR detection using narrow-bandgap CQDs and heterostructures.
• Design device architectures that suppress dark current and enhance photocarrier extraction.
• Study charge transport, recombination, noise, response speed, and operational stability.
• Develop photodiode and LED platforms for infrared detection.
• Establish quantitative structure–property–device relationships in collaboration with the surface-chemistry postdoc.

Responsibilities

• Fabricate CQD infrared photodetectors using solution-processed thin films.
• Optimize device structures, transport layers, electrodes, and interfacial layers.
• Measure and analyze responsivity, EQE, detectivity, dark current, noise spectral density, linear dynamic range, response time, and stability.
• Investigate dark-current mechanisms, trap-assisted transport, carrier mobility, and recombination dynamics.
• Develop strategies for room-temperature SWIR and MWIR operation.
• Collaborate with the CQD chemistry team to correlate ligand chemistry and surface passivation with device performance.
• Prepare high-quality manuscripts and present results at conferences.

Successful candidates are expected to:

• Work independently while contributing to a collaborative research program.
• Maintain rigorous experimental records and reproducible protocols.
• Develop mechanistic understanding beyond empirical optimization.
• Publish in high-impact journals in materials chemistry, nanoscience, and optoelectronics.
• Mentor graduate students and contribute to a strong laboratory culture.
• Communicate results clearly in manuscripts, presentations, and group meetings.

• PhD in materials science, electrical engineering, applied physics, photonics, chemical engineering, or a related field.
• Strong experience in thin-film optoelectronic device fabrication.
• Knowledge of photodetector physics, semiconductor junctions, charge transport, and recombination.
• Experience measuring optoelectronic device performance.
• Ability to analyze current–voltage behavior, spectral response, noise, and transient photocurrent.
• Strong publication record in photodetectors, CQD devices, infrared optoelectronics, or semiconductor devices.

Preferred Experience

• Experience with CQD photodetectors, especially SWIR or MWIR detectors.
• Experience with photodiodes, phototransistors, or photoconductive detectors.
• Knowledge of low-noise measurements and detectivity analysis.
• Experience with interfacial engineering and transport-layer optimization.
• Familiarity with narrow-bandgap semiconductors such as InAs, InSb, Ag₂Te, HgTe, PbS, PbSe, or related CQD systems.
• Experience with optical-field enhancement, cavity structures, plasmonic enhancement, or photogating mechanisms.

• Design device architectures that suppress dark current and enhance photocarrier extraction.
• Study charge transport, recombination, noise, response speed, and operational stability.
• Develop photodiode and LED platforms for infrared detection.
• Establish quantitative structure–property–device relationships in collaboration with the surface-chemistry postdoc.

Responsibilities

• Fabricate CQD infrared photodetectors using solution-processed thin films.
• Optimize device structures, transport layers, electrodes, and interfacial layers.
• Measure and analyze responsivity, EQE, detectivity, dark current, noise spectral density, linear dynamic range, response time, and stability.
• Investigate dark-current mechanisms, trap-assisted transport, carrier mobility, and recombination dynamics.
• Develop strategies for room-temperature SWIR and MWIR operation.
• Collaborate with the CQD chemistry team to correlate ligand chemistry and surface passivation with device performance.
• Prepare high-quality manuscripts and present results at conferences.

We will only accept applications through Interfolio. Submissions by email to the PI or any team member will not be considered.